Efficient wafer sawing requires the careful optimization of numerous variables, including machine speed, wire tension, slurry composition, and temperature level. Znshine group optimizes its wafer sawing process to match its ingot production and feedstock supply while producing wafers that match industry benchmarks for wafer quality and thickness.
Currently, we slice monocrystalline wafers to a 200 micron thickness, while maintaining a low breakage rate. After the ingots are inspected, monocrystalline ingots are squared by squaring machines. Through high-precision cutting techniques, the squared ingots are then sliced into wafers by wire saws using steel wires and silicon carbon powder. To produce multicrystalline wafers, multicrystalline ingots are first cut into pre-determined sizes. After being inserted into frames, the wafers go through a cleansing process to remove debris from the previous processes, and are then dried. Wafers are inspected for contaminants and packed andtransferred to our solar cell production facilities.
Tech Specs
 
Product Monocrystalline Silicon Wafer Oxygen concentration ≤ 1 × 1018 at/cm3
Conductivity Type P-type Dislocation density ≤ 3000 / cm2
Base Area 125.0mm × 125.0mm ± 0.5mm Life time ≥ 10μs
Diameter 150.0mm ± 0.5mm; 165.0mm ± 0.5mm Wafer Surface As cut and cleaned. No grease stains and pin
Thickness 180μm ± 20μm; 200μm ± 20μm Warping ≤ 20μm
TTV(µm) ≤ 30μm Corner Angle 90 ± 0.3 degree
Resistivity 0.5-3.0Ωcm, 3.0-6.0Ωcm Edge Chips Length ≤ 1.0mm, Depth, 0.5mm
Dopant Species Boron Edge Crack Not Allowed
Orientation (100) ± 1° Saw marks Depth ≤ 20μm
Carbon concentration ≤ 5 × 1016 at/cm3 Pin Holes No visible pin holes with the naked eye